کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1794841 1023709 2009 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Electron-carrier generation by edge dislocations in InN films: First-principles study
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Electron-carrier generation by edge dislocations in InN films: First-principles study
چکیده انگلیسی

Electronic structures of edge dislocations in InN films are studied using the first-principles calculation. We found that dangling-bond states of In atoms localized in the dislocation core are located above the conduction-band bottom and thus supplies the electron carriers to the conduction band of bulk InN, in agreement with the experimental suggestion by Wang et al. [Appl. Phys. Lett. 90 (2007) 151901]. Moreover, it is shown that the Fermi energy in the conduction band has the tendency to be pinned at the energy positions of N-related dangling-bond states.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 311, Issue 10, 1 May 2009, Pages 2767–2771
نویسندگان
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