کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1794947 | 1023710 | 2007 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth evolution in sidewall lateral epitaxial overgrowth (SLEO)
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
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چکیده انگلیسی
Sidewall lateral epitaxial overgrowth (SLEO) is a technique to reduce the extended defect densities in non-polar III-nitrides in a single re-growth by employing lateral overgrowth from sidewalls of an etched nitride through the mask openings. The technique involved depositing a stripe patterned mask over a-plane (1 1 2¯ 0) GaN along ã1 1¯ 0 0ãGaN and creating vertical {0 0 0 1} c-plane sidewalls by etching of nitride through the openings in the mask at a depth so that in the first growth stage, coalescence was achieved from the sidewalls before the growth of defected material trench bottom impeded lateral sidewall growth. After achieving the first-stage coalescence from the sidewalls, the material was grown over in two subsequent stages-growing up through the window openings, and then over the mask region until a smooth coalesced film was achieved. In this paper, we describe the effect of growth variables on material quality in all three stages of growth evolution in SLEO until coalescence. With the SLEO technique, threading dislocation densities of 106-107 cmâ2 and stacking fault densities of 103-104 cmâ1 were achieved in non-polar a-plane (1 1 2¯ 0) GaN grown over r-plane sapphire.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 306, Issue 2, 15 August 2007, Pages 330-338
Journal: Journal of Crystal Growth - Volume 306, Issue 2, 15 August 2007, Pages 330-338
نویسندگان
Bilge Imer, Feng Wu, James S. Speck, Steven P. DenBaars,