Preparation, microstructure and electrical properties of 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 films on different epitaxial bottom electrodes buffered Si substrates

Completely (0 0 1)-oriented 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMNT) films were successfully prepared on different epitaxial bottom electrodes buffered Si substrates. On Ir electrode, the dielectric constant and remnant polarization of the PMNT film are 900 and 8.7 μC/cm2, respectively. Nevertheless, using the La0.5Sr0.5CoO3 (LSCO) electrode, the corresponding values can increase to 1650 and 15 μC/cm2. Larger grains and less residual tensile stress of the film prepared on the LSCO electrode were found to be responsible for such improvements.