کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1795015 1023712 2008 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
VLS growth of Si nanocones using Ga and Al catalysts
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
VLS growth of Si nanocones using Ga and Al catalysts
چکیده انگلیسی

Vapor–liquid–solid growth of needle-like silicon nanocones via atmospheric pressure chemical vapor deposition from SiCl4 and using Ga and Al catalysts is reported. Scanning electron microscopy and transmission electron microscopy reveal that the nanocones are composed of an oxide shell with a Si core. Energy dispersive spectroscopy along the length of the nanocones indicates that the catalyst is gradually consumed during the growth process, resulting in the needle-like morphology. Growth of the Si nanocones may occur via H2 reduction of SiCl4 at 950 °C, during which HCl(g) is generated as the reaction by-product. In this growth mechanism, the gradual etching of the Al/Ga catalyst by HCl leads to a gradual decrease of the catalyst volume, and hence the tapered Si nanowire morphology.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 310, Issue 20, 1 October 2008, Pages 4407–4411
نویسندگان
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