کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1795090 | 1023714 | 2007 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
III-Nitride crystal growth from nitride-salt solution
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Single crystals of hexagonal boron nitride were grown by the nitride-salt solution temperature-gradient growth technique. Seeded growth was performed at 0.2 MPa nitrogen pressure between 760 and 900 °C. Growth of BN crystals was confirmed by Raman spectroscopy and transmission electron diffraction to be graphite-type boron nitride. The growth mechanism is under investigation, however, the crystals embedded in the solvent matrix were found to be separated from the seed by a boundary layer which seems to be a result of a solvent–seed interaction. This growth technique can be applied to AlN and to GaN with the application of pressure.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 305, Issue 2, 15 July 2007, Pages 399–402
Journal: Journal of Crystal Growth - Volume 305, Issue 2, 15 July 2007, Pages 399–402
نویسندگان
B.N. Feigelson, R.M. Frazier, M. Twigg,