کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1795164 | 1023716 | 2007 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Si multicrystals grown by the Czochralski method with multi-seeds
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Si multicrystals grown by the Czochralski method with multi-seeds Si multicrystals grown by the Czochralski method with multi-seeds](/preview/png/1795164.png)
چکیده انگلیسی
Si multicrystals with several large grains have been grown by the Czochralski (CZ) method with multiple seeds using semiconductor-grade high-purity Si raw material in order to investigate the influence of defects such as dislocations and sub-grain-boundaries on the minority carrier lifetime. Two or three single-crystal Si seeds with [1Â 0Â 0], [1Â 1Â 0] and [1Â 1Â 0] orientations were used for the growth. It was found that the minority carrier lifetime in the Si multicrystals decreased considerably in the region of grains near the semicoherent interfaces with others, e.g., interfaces between [2Â 3Â 2] and [1Â 1Â 1] grains, [1Â 0Â 0] and [1Â 1Â 1] grains, and [1Â 1Â 0] and [1Â 1Â 1] grains. Numerous dislocations with densities as high as 106/cm2 in these grains moved to align and generate sub-grain boundaries by the shear stress caused by the semicoherence near the interfaces, which was determined to be responsible for the decrease in the minority carrier lifetime.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 307, Issue 2, 15 September 2007, Pages 466-471
Journal: Journal of Crystal Growth - Volume 307, Issue 2, 15 September 2007, Pages 466-471
نویسندگان
Takeshi Hoshikawa, Toshinori Taishi, Xinming Huang, Satoshi Uda, Muneyoshi Yamatani, Katsuhiko Shirasawa, Keigo Hoshikawa,