کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1795299 | 1524483 | 2007 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Thallium incorporation during TlInAs growth by low-temperature MBE
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
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چکیده انگلیسی
Molecular-beam epitaxial growth of TlxIn1âxAs has been performed on InAs substrates at substrate temperatures between 150 and 250 °C. Optical microscopy revealed that Tl droplets decrease in size and in density with decreasing growth temperature, and vanish at lower temperatures than 175 °C. Secondary ion mass spectrometry (SIMS) revealed that Tl concentration shows almost flat depth profiles in the samples grown at 150-175 °C, but shows concave profiles in the samples grown at 200-225 °C. Electron probe micro analysis (EPMA) as well as SIMS showed that the Tl mole fraction x in the samples grown at 150-175 °C increases up to 2.7% almost in proportion with Tl flux. X-ray diffraction and cross-sectional transmission electron microscopy studies showed that monocrystalline growth is prevented if the beam equivalent pressure ratio of Tl/In is beyond 4%.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volumes 301â302, April 2007, Pages 117-120
Journal: Journal of Crystal Growth - Volumes 301â302, April 2007, Pages 117-120
نویسندگان
M. Takushima, N. Kobayashi, Y. Yamashita, Y. Kajikawa, Y. Satou, Y. Tanaka, N. Sumida,