کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1795319 | 1524483 | 2007 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Heteroepitaxial growth of rotated InSb films on a Si(1Â 1Â 1) substrate via 2Ã2-In surface reconstruction
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The heteroepitaxial growth of InSb films via In-induced surface reconstructions such as 2Ã2-In and â3Ãâ3-In on a Si(1 1 1) substrate was carried out by using a two-step growth procedure in an ultra-high vacuum (UHV) chamber. The samples were characterized by high-energy electron diffraction (RHEED), X-ray diffraction (XRD), scanning tunneling microscopy (STM) and Hall measurements. The RHEED and XRD (Ï scan) patterns of the samples showed the existence of InSb crystals rotated by 30° with respect to Si substrate. From comparison between the growth of InSb films via 2Ã2-In and that via â3Ãâ3-In, we found that the origin of the 30°-rotated InSb is due to the existence of the In-Sb bi-layer formed by 1 monolayer (ML) Sb deposition onto the In-induced surface reconstructions.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volumes 301â302, April 2007, Pages 207-211
Journal: Journal of Crystal Growth - Volumes 301â302, April 2007, Pages 207-211
نویسندگان
M. Mori, M. Saito, Y. Yamashita, K. Nagashima, M. Hashimoto, C. Tatsuyama, T. Tambo,