کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1795321 | 1524483 | 2007 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
MBE growth of heavily carbon doped GaAsSb on InP for heterojunction bipolar transistor applications
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Carbon doped GaAsSb samples have been grown by solid source molecular beam epitaxy using carbon tetrabromide as carbon source. A maximal hole concentration of 4.5×1020 cm−3 has been obtained with a corresponding mobility of 19 cm2/V s. For hole concentrations in the 4–8×1019 cm−3 range, typically used in HBTs, the hole mobility is 45–50 cm2/V s. We show that 450 °C is the optimal growth temperature at which both high hole concentration and mobility are obtained. An InP/GaAsSb/InP DHBT test structure with a 2×1019 cm−3 carbon doped base has been realised. The current gain β is about 80 and the emitter–base and base–collector junction ideality factors are 1.15 and 1.05, respectively, indicating good junction properties.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volumes 301–302, April 2007, Pages 217–220
Journal: Journal of Crystal Growth - Volumes 301–302, April 2007, Pages 217–220
نویسندگان
D.A. Yarekha, S. Godey, X. Wallart, H. Colder, M. Zaknoune, F. Mollot,