کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1795331 | 1524483 | 2007 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
GaMnAs grown on (0 0 1), (3 1 1) A and (1 1 0) GAaS substrates: Comparison of growth conditions and post-growth annealing behaviour
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Thin GaMnAs layers were grown by low temperature molecular beam epitaxy on (0 0 1), (3 1 1) A and (1 1 0) GaAs substrates. In an effort to increase the ferromagnetic transition temperature TC, we studied growth conditions and the effectiveness of post-growth annealing under an arsenic capping layer and in air. Avoiding As antisite defects with a small As to Ga flux ratio during MBE growth and reducing Mn interstitials by annealing the GaMnAs films in air for very long time at temperatures far below growth temperature allows us to obtain (0 0 1) samples with TC up to 150 K, (3 1 1) A samples with TC about of 110 K and (1 1 0) samples with TC of 89 K.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volumes 301–302, April 2007, Pages 260–263
Journal: Journal of Crystal Growth - Volumes 301–302, April 2007, Pages 260–263
نویسندگان
Ursula Wurstbauer, Matthias Sperl, Dieter Schuh, Günther Bayreuther, Janusz Sadowski, Werner Wegscheider,