کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1795354 | 1524483 | 2007 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
p-Type ZnO on sapphire by using O2-N2 co-activating and fabrication of ZnO LED
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
A co-activating route was employed to fabricate ZnO light-emitting diode (LED) by using molecular beam epitaxy. N2 was used as the acceptor dopant source and O2 was used as assistant gas for N2 decomposing more than only oxygen source. Emission spectra of the N2+O2 mixture plasma were monitored in situ in order to adjust growth parameters timely. Under the assistance of O2, N atoms content in the plasma of the mixture shows a significant increase compared to the case without O2 assistance. Electrical measurements of the as-grown p-type ZnO on sapphire show a carrier concentration of 1.2Ã18Â cmâ3 and a mobility approaching 1Â cm2Â Vâ1Â sâ1. A ZnO LED was fabricated by depositing undoped n-type ZnO on the p-type layer. The turn-on voltage at 100Â K is about 3.70Â V, which approaches the bandgap of ZnO. Electroluminescence spectra show two bands: one is centered at 423 and the other centered at 523Â nm, respectively.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volumes 301â302, April 2007, Pages 362-365
Journal: Journal of Crystal Growth - Volumes 301â302, April 2007, Pages 362-365
نویسندگان
Z.Z. Zhang, Z.P. Wei, Y.M. Lu, D.Z. Shen, B. Yao, B.H. Li, D.X. Zhao, J.Y. Zhang, X.W. Fan, Z.K. Tang,