کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1795379 1023721 2007 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Tin-induced enhancement of photoluminescence and crystal growth in Si-rich silica films
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Tin-induced enhancement of photoluminescence and crystal growth in Si-rich silica films
چکیده انگلیسی
The effect of local Sn-doping on the photoluminescence (PL) properties of the Si-rich silica (SRSO) thin film was investigated. In order to dope Sn into the SRSO film, we introduced a Sn interlayer in the film. After annealing at temperatures higher than 1000 °C, the PL intensity of the Sn-doped samples was about 2 times higher than that of the undoped ones, while Sn-doped and undoped samples annealed at lower temperatures had almost the same PL intensities. The microstructure and mechanism of the PL improvement of this SiOx/Sn/SiOx system were analyzed by Raman scattering spectroscopy, Auger electron spectroscopy, and X-ray diffraction.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 305, Issue 1, 1 July 2007, Pages 30-35
نویسندگان
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