کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1795379 | 1023721 | 2007 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Tin-induced enhancement of photoluminescence and crystal growth in Si-rich silica films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
The effect of local Sn-doping on the photoluminescence (PL) properties of the Si-rich silica (SRSO) thin film was investigated. In order to dope Sn into the SRSO film, we introduced a Sn interlayer in the film. After annealing at temperatures higher than 1000 °C, the PL intensity of the Sn-doped samples was about 2 times higher than that of the undoped ones, while Sn-doped and undoped samples annealed at lower temperatures had almost the same PL intensities. The microstructure and mechanism of the PL improvement of this SiOx/Sn/SiOx system were analyzed by Raman scattering spectroscopy, Auger electron spectroscopy, and X-ray diffraction.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 305, Issue 1, 1 July 2007, Pages 30-35
Journal: Journal of Crystal Growth - Volume 305, Issue 1, 1 July 2007, Pages 30-35
نویسندگان
C. Ma, L. Bi, J.Y. Feng,