کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1795387 | 1023721 | 2007 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Structural properties of GaN grown on Zn-face ZnO at room temperature
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We have grown GaN films on atomically flat Zn-face ZnO at room temperature (RT) and 700 °C, and compared their structural properties. Although the film quality of GaN grown at 700 °C was quite poor due to the serious interface reaction between GaN and ZnO, GaN with an atomically flat stepped and terraced surface grows epitaxially at RT due to the suppression of the interface reaction. The growth of GaN at RT proceeds in the layer-by-layer mode, while at 700 °C it grows three-dimensionally. Atomic force microscope observations after alkali etching of GaN surfaces revealed that GaN grown at RT exhibits an N-polarity while that grown at 700 °C has a Ga-polarity.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 305, Issue 1, 1 July 2007, Pages 70–73
Journal: Journal of Crystal Growth - Volume 305, Issue 1, 1 July 2007, Pages 70–73
نویسندگان
Atsushi Kobayashi, Yuki Shirakura, Kazuo Miyamura, Jitsuo Ohta, Hiroshi Fujioka,