کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1795481 | 1023723 | 2007 | 6 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Temperature homogeneity of polysilicon rods in a Siemens reactor Temperature homogeneity of polysilicon rods in a Siemens reactor](/preview/png/1795481.png)
Siemens process productivity can be limited by non-homogeneous temperature profile in polysilicon rods. To overcome this limitation high-frequency current sources have been proposed. An analysis is presented which, based on electromagnetic and heat transfer theory, studies temperature and current density profiles within the rods. Two linked differential equations have been numerically solved by use of non-linear methods. The solution of these equations shows that by means of an increase in current frequency, skin effect takes place, heat generation in the inner part of the rod is decreased and therefore temperature homogeneity increases. The effect of the reflectivity of reactor walls is also analysed and reveals that temperature homogeneity can be improved by minimizing radiation losses better than by heating with high-frequency current sources.
Journal: Journal of Crystal Growth - Volume 299, Issue 1, 1 February 2007, Pages 165–170