کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1795526 1524482 2008 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Characterizations of piezoelectric GaPO4 single crystals grown by the flux method
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Characterizations of piezoelectric GaPO4 single crystals grown by the flux method
چکیده انگلیسی

Hexagonal gallium orthophosphate crystals have been obtained by spontaneous nucleation using the slow cooling method from X2O–3MoO3 fluxes with X=Li, K. Compared to GaPO4 crystals grown by hydrothermal methods, infrared measurements have revealed flux-grown samples without hydroxyl groups and thermal analyses have pointed out the total reversibility of the phase transition α-quartz GaPO4↔β-cristobalite GaPO4. The elastic constants of these millimeter-size flux-grown α-GaPO4 piezoelectric crystals were experimentally determined from their Brillouin scattering behaviour at room and high temperatures. The room temperature results were in good agreement with the published ones concerning hydrothermally grown samples and the two longitudinal elastic constants measured versus temperature until 850 °C have shown a monotonous evolution.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 310, Issues 7–9, April 2008, Pages 1455–1459
نویسندگان
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