Effect of source composition on the vapor phase epitaxy of Cd1−xZnxTe large-area layers

To study the effect of source composition, the Cd1−xZnxTe sources and as-grown layers were characterized by a scanning electronic microscopy (SEM), composition analysis (EDAX) and X-ray diffractometry (XRD). It was shown that the prolonged VPE growth is followed by the continuous deterioration of source composition that results in an inhomogeneous enrichment of Cd1−xZnxTe layers with Zn. Nevertheless, the fast VPE runs using the sources in the form of thin polycrystalline wafers provide the uniform Cd1−xZnxTe layers that could be considered for applications.