کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1795590 | 1524482 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Optimization of the design of a crucible for a SiC sublimation growth system using a global model
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Induction heating, temperature field and growth rate for a sublimation growth system of silicon carbide were calculated by using a global simulation model. The effects of shape of the crucible on temperature distribution and growth rate were investigated. It was found that thickness of the substrate holder, distance between the powder and substrate, and angle between the crucible wall and powder free surface are important for growth rate and crystal quality. Finally, a curved powder free surface was also studied. The results indicate that the use of a curved powder free surface is also an effective method for obtaining a higher growth rate.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 310, Issues 7–9, April 2008, Pages 1810–1814
Journal: Journal of Crystal Growth - Volume 310, Issues 7–9, April 2008, Pages 1810–1814
نویسندگان
X.J. Chen, L.J. Liu, H. Tezuka, Y. Usuki, K. Kakimoto,