Growth of single-crystal Sb2S3 nanowires via solvothermal route

Single-crystal Sb2S3 nanowires with high aspect ratios have been successfully prepared on a large scale via a simple convenient solution-based approach, without the existence of catalysts or templates. The nanowires have diameters of 20–50 nm and lengths of several micrometers. The FESEM and TEM images show that the Sb2S3 nanowires surfaces are smooth and clean. The growth mechanism of the nanowires is also discussed. Diffuse reflection spectrum indicates that the band gap of the as-prepared Sb2S3 nanowires is 1.9 eV, which is larger than the reported value.