کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1795707 1023727 2008 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Comparison of the growth behavior of γ-Al2O3 thin films grown on Si (1 1 1) by molecular beam epitaxy using N2O and O2
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Comparison of the growth behavior of γ-Al2O3 thin films grown on Si (1 1 1) by molecular beam epitaxy using N2O and O2
چکیده انگلیسی

Epitaxial growth of γ-Al2O3 films was carried out by molecular beam epitaxy (MBE) in either O2 or N2O ambient and with substrate temperature and pressure ranging from 600 to 800 °C and 5×10−4 to 3×10−2 Pa, respectively. Using N2O gas, pits caused by the etching of Si were observed at a gas pressure of 3×10−2 Pa and substrate temperature of 800 °C, and Al droplets were formed at 5×10−4 Pa and 800 °C, while neither pits nor droplets were obtained with O2 under the same growth conditions. This suggests that O2 is a more suitable oxidation gas than N2O for growing epitaxial γ-Al2O3 films.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 310, Issue 2, 15 January 2008, Pages 372–377
نویسندگان
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