کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1795749 1023728 2006 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Preparation of piezoelectric 0.1Pb(Zn0.5W0.5)O3-0.9Pb(Zr0.5Ti0.5)O3 solid solution and thick films for low temperature firing on a Si-substrate
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Preparation of piezoelectric 0.1Pb(Zn0.5W0.5)O3-0.9Pb(Zr0.5Ti0.5)O3 solid solution and thick films for low temperature firing on a Si-substrate
چکیده انگلیسی
A newly designed lead zirconate titanate (PZT) solid solution 0.1Pb(Zn0.5W0.5)O3-0.9Pb(Zr0.5Ti0.5)O3 was prepared. It is feasible for a low temperature firing. X-ray diffraction shows that its structure is a single perovskite phase, and its thick films were successfully fabricated on a Pt/TiO2/SiNx/Si-substrate through the screen printing method. A conventional screen printing thick film and a hybrid thick film (screen printing and PZT sol infiltration) was also compared. According to an SEM study, the prepared thick film showed a much denser microstructure with the sol infiltration method. The electrical properties of the prepared PZT solid solution and its thick film were predominantly realized in a low temperature region. The dielectric constant of a conventional screen printing thick film and the hybrid thick film (sintered at 900 °C), was 703.5 and 911.3, respectively.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 295, Issue 2, 1 October 2006, Pages 172-178
نویسندگان
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