Partly three-dimensional calculation of silicon Czochralski growth with a transverse magnetic field

A three-dimensional (3D) global model is required for investigating temperature distribution in a crystal in a Czochralski (CZ) furnace for silicon crystal growth. We succeeded in constructing a code in which the 3D configuration of the furnace is partly taken into account. Convective, conductive and radiative heat transfer in the furnace are solved simultaneously by a finite control-volume method. The model enables us to carry out 3D global simulations with moderate requirements of computer memory and computation time. Some results obtained by using the partly 3D global model for small silicon CZ growth in a transverse magnetic field are presented. Results for oxygen transfer in the melt of TMCZ are also presented.