کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1795849 | 1023730 | 2008 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth behavior of artificial hexagonal GdMnO3 thin films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Growth behavior of artificial hexagonal GdMnO3 thin films Growth behavior of artificial hexagonal GdMnO3 thin films](/preview/png/1795849.png)
چکیده انگلیسی
The epitaxial growth of the artificial hexagonal GdMnO3 phase was investigated on substrates with hexagonal symmetries. The GdMnO3 thin films grown on Pt(1Â 1Â 1)/Al2O3(0Â 0Â 0Â 1) substrates showed a mixed state of a dominant hexagonal phase and small additional orthorhombic phases, which were stable in bulk. In this study, high oxygen partial pressures during film deposition were found to help to fabricate GdMnO3 thin films in the dominant hexagonal phase. Also, the growth behavior of the small additional orthorhombic GdMnO3 phases was studied by X-ray diffraction (XRD) measurements with a synchrotron radiation X-ray source. This study confirmed that even the orthorhombic GdMnO3 phases prefer specific orientations on the substrates with an in-plane hexagonal symmetry.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 310, Issue 4, 15 February 2008, Pages 829-835
Journal: Journal of Crystal Growth - Volume 310, Issue 4, 15 February 2008, Pages 829-835
نویسندگان
Daesu Lee, Jung-Hyuk Lee, Seung Yup Jang, Pattukkannu Murugavel, Young-Dong Ko, Jin-Seok Chung,