کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1795880 | 1524485 | 2007 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth and characterization of BGaAs and BInGaAs epilayers on GaAs by MOVPE
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
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چکیده انگلیسی
BGaAs and BInGaAs alloys have been grown by metalorganic vapour phase epitaxy. The epitaxial layers were grown on (0 0 1) GaAs substrates misoriented 1° towards [1 1 0] using diborane, trimethylindium, triethylgallium and arsine as precursors. The influence of diborane flow rate on the growth mode of BGaAs layers was highlighted. We also studied the influence of boron gas-phase concentration and growth temperature on the incorporation of boron and indium into BGaAs and BInGaAs alloys.BInGaAs/GaAs single quantum wells were grown and quantum well emission was observed by photoluminescence at room and low temperature. At 300 K, emission wavelength was up to 1.07 μm.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 298, January 2007, Pages 81–84
Journal: Journal of Crystal Growth - Volume 298, January 2007, Pages 81–84
نویسندگان
Philippe Rodriguez, Laurent Auvray, Hervé Dumont, Jacques Dazord, Yves Monteil,