کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1795921 | 1524485 | 2007 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Epitaxial lateral overgrowth of AlN on trench-patterned AlN layers
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Epitaxial lateral overgrowth (ELO) of high-quality AlN layers on trench-patterned AlN underlying layers has been demonstrated by high-temperature metal-organic vapor phase epitaxy. Under optimized conditions, a high growth rate and an atomically flat surface of thick ELO-AlN without cracks were obtained. Fully coalesced ELO-AlN epilayers were obtained on AlN templates having 〈101¯0〉 trenches. AlN grown above the groove had low dislocation density due to filtration caused by the grooves. In addition, most of the dislocations threading from the AlN template were annihilated by the formation of a loop structure during growth with increasing thickness of AlN. The average dislocation density of the ELO-AlN was calculated to be 4×107 cm−2.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 298, January 2007, Pages 257–260
Journal: Journal of Crystal Growth - Volume 298, January 2007, Pages 257–260
نویسندگان
Masataka Imura, Kiyotaka Nakano, Gou Narita, Naoki Fujimoto, Narihito Okada, Krishnan Balakrishnan, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki, Tadashi Noro, Takashi Takagi, Akira Bandoh,