کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1795946 1524485 2007 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Aluminum incorporation in AlxGa1-xN-layers and implications for growth optimization
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Aluminum incorporation in AlxGa1-xN-layers and implications for growth optimization
چکیده انگلیسی
The solid Al-composition xAl depends critically on growth parameters for constant gas phase compositions. The strongest effect is found for total pressure: Al is efficiently incorporated only at pressures lower than 50 mbar. This can be understood mainly as a result of prereactions in the gas phase involving TMAl and NH3 which has been discussed earlier in a theoretical paper of the Jensen group [T.G. Mihopoulos, V. Gupta, K.F. Jensen, J. Crystal Growth 195 (1998) 733]. In this publication we compare the predictions of this work with our data and implications for growth optimization.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 298, January 2007, Pages 361-366
نویسندگان
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