Electronic band structures and transport properties of wurtzite indium nitride grown by metalorganic vapor phase epitaxy

We have carried out a detailed investigation on the electronic band structures and transport properties of a high-quality wurtzite indium nitride (InN) single crystal grown by metalorganic vapor phase epitaxy. With the aid of vacuum ultraviolet optical reflection spectrum in the range of 4.0-20.0 eV, together with the theoretical analysis, we were able to identify up to 8 electronic transitions, showing a clear picture for the critical point transitions in InN. The InN bulk and low mobility surface conduction have been extracted and found to be temperature (10-300 K) -independent in both electron concentration and mobility. We also revealed the effects of localization and electron-electron interactions in the low temperature (below 5 K) magnetoconductance of the degenerate semiconductor.