کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1796048 | 1023734 | 2006 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of bias voltages on the synthesis of nanostructured carbon nitride films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Effect of bias voltages on the synthesis of nanostructured carbon nitride films Effect of bias voltages on the synthesis of nanostructured carbon nitride films](/preview/png/1796048.png)
چکیده انگلیسی
XPS, Raman scattering and SEM were used to study effect of DC bias voltages (0-400Â V) on the synthesis of high nitrogen content of carbon nitride (CNx) films. Maximal N/C ratio up to 0.81 was first obtained at the bias voltage of 250Â V, and the maximal fraction of sp3 CN bond inside the film was up to 40%. Either too high or too low bias voltages would result in decrease of nitrogen content inside the CNx films. Typical G and D bands were identified. Intensities of G and D bands showed periodic development following an increase of bias voltages. Several groups of nanoscale particles were observed at the pulsed bias voltage of 5Â kV. Each group of particles appeared sunflower type of distribution where the biggest (85Â nm) particle at the center was surrounded by many small sizes (35Â nm) of CN particles.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 291, Issue 1, 15 May 2006, Pages 22-26
Journal: Journal of Crystal Growth - Volume 291, Issue 1, 15 May 2006, Pages 22-26
نویسندگان
P.X. Feng, P. Yang, Y.C. Shi,