کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1796056 | 1023734 | 2006 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
GaN single crystals grown under moderate nitrogen pressure by a new flux: Ca3N2
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Using a new flux, Ca3N2, bulk GaN crystals were grown from Ga melt at 900 °C under a nitrogen pressure of about 0.2 MPa. Optical observations indicated that the grown GaN crystals were transparent hexagonal prisms with length up to 1.5 mm. The morphology of these GaN crystals was characterized by scanning electron microscopy (SEM) and compared with that of GaN crystals grown by using Li and Na flux. Raman scattering examinations revealed that the GaN crystals grew along [0 0 0 1] direction. These results demonstrated that Ca3N2 was an effective new flux in the crystal growth of GaN besides the known fluxes of Li, Na and Na–Ca.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 291, Issue 1, 15 May 2006, Pages 72–76
Journal: Journal of Crystal Growth - Volume 291, Issue 1, 15 May 2006, Pages 72–76
نویسندگان
J.K. Jian, G. Wang, Cong Wang, W.X. Yuan, X.L. Chen,