Investigation of polycrystallization mechanism at initial interfaces in InxGa1−xAs bulk crystals on lattice mismatched seeds

In the growing of In0.3Ga0.7As single crystals, polycrystallization at the initial interface with lattice mismatched seeds is a major problem because no homogeneous In0.3Ga0.7As seed crystals has been obtained and usually GaAs crystals are used as seeds. Hence, a mechanism of polycrystallization at the initial interface was investigated. In this paper, a local misfit stress at the interface is calculated. Then it is compared with the critical resolved shear stress (CRSS). It was determined that the polycrystallization at the initial interface is related to the magnitude of the misfit stress and to that of the CRSS. We discuss growth of larger In0.3Ga0.7As single crystals by avoidance of the polycrystallization at the initial interface.