Study on Czochralski growth and defects of LiAlO2 single crystals

The LiAlO2 single crystal was grown by the conventional Czochralski method under ambient pressure with pull rate at 3.0 mm/min and rotation rate at 25 rpm by a home-made furnace. In order to examine the defects of the LiAlO2 crystal, the surfaces were polished, and etched; these surfaces included the (1 0 0), (1¯00), (0 1 0), and (0 0 1) faces. Analysis with an optical microscope showed two domains on the (1¯00) and the (0 1 0) surfaces. Moreover, some inclusions were observed on the (0 1 0) face where the etch pit density was 1.3–1.6×104 cm−2. The experimental results showed that there are different etching characteristics and patterns on these four surfaces of the specimen.