Preparation and characterization of flash evaporated tin selenide thin films

Tin selenide thin films were grown by flash evaporation method at substrate temperatures, TS=303–513 K at an interval of 30 K. Single phase, nearly stoichiometric and polycrystalline films with strong (4 0 0) orientation exhibiting orthorhombic structure was observed at the substrate temperature of 513 K. The optical absorption studies indicated a direct band gap of 1.26 eV with high absorption coefficient (>104 cm−1) near the fundamental absorption edge. The films were found to have an electrical resistivity 8.1 Ω cm with p-type conduction.