کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1796309 1023741 2007 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Preparation and characterization of flash evaporated tin selenide thin films
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Preparation and characterization of flash evaporated tin selenide thin films
چکیده انگلیسی

Tin selenide thin films were grown by flash evaporation method at substrate temperatures, TS=303–513 K at an interval of 30 K. Single phase, nearly stoichiometric and polycrystalline films with strong (4 0 0) orientation exhibiting orthorhombic structure was observed at the substrate temperature of 513 K. The optical absorption studies indicated a direct band gap of 1.26 eV with high absorption coefficient (>104 cm−1) near the fundamental absorption edge. The films were found to have an electrical resistivity 8.1 Ω cm with p-type conduction.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 306, Issue 1, 1 August 2007, Pages 68–74
نویسندگان
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