کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1796401 | 1023744 | 2006 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Depth dependence of optical property beyond the critical thickness of an InGaN film
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Depth dependence of optical property beyond the critical thickness of an InGaN film Depth dependence of optical property beyond the critical thickness of an InGaN film](/preview/png/1796401.png)
چکیده انگلیسی
We study the depth-dependent variation of optical property beyond the critical thickness in an InGaN thin film. In the sample, both free-carrier and localized-state recombination activities are observed. The emission peak corresponding to the localized states in photoluminescence (PL) measurement becomes more prominent with increasing sample depth, implying stronger clustering in the deeper layers. Although the PL spectral peak variation is weak, that of cathodoluminescence (CL), corresponding to the activities of the localized states, shows a clear red shift trend with depth. The red shift trend is attributed to the stronger clustering behavior and possibly stronger quantum-confined Stark effect in the nano-clusters, which is due to the residual strain beyond the critical thickness, in a deeper layer.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 288, Issue 1, 2 February 2006, Pages 18-22
Journal: Journal of Crystal Growth - Volume 288, Issue 1, 2 February 2006, Pages 18-22
نویسندگان
Chih-Chung Teng, Hsiang-Chen Wang, Tsung-Yi Tang, Yen-Cheng Lu, Yung-Chen Cheng, C.C. Yang, Kung-Jen Ma, Wei-Ming Wang, Chi-Wei Hsu, L.C. Chen,