کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1796401 1023744 2006 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Depth dependence of optical property beyond the critical thickness of an InGaN film
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Depth dependence of optical property beyond the critical thickness of an InGaN film
چکیده انگلیسی
We study the depth-dependent variation of optical property beyond the critical thickness in an InGaN thin film. In the sample, both free-carrier and localized-state recombination activities are observed. The emission peak corresponding to the localized states in photoluminescence (PL) measurement becomes more prominent with increasing sample depth, implying stronger clustering in the deeper layers. Although the PL spectral peak variation is weak, that of cathodoluminescence (CL), corresponding to the activities of the localized states, shows a clear red shift trend with depth. The red shift trend is attributed to the stronger clustering behavior and possibly stronger quantum-confined Stark effect in the nano-clusters, which is due to the residual strain beyond the critical thickness, in a deeper layer.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 288, Issue 1, 2 February 2006, Pages 18-22
نویسندگان
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