کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1796433 | 1023744 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
GaAs wafer for passive mode locking and compression of energetic Q-switched pulses
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: GaAs wafer for passive mode locking and compression of energetic Q-switched pulses GaAs wafer for passive mode locking and compression of energetic Q-switched pulses](/preview/png/1796433.png)
چکیده انگلیسی
We show experimentally that by use of an appropriately coated GaAs wafer as output coupler, either self-started passive mode locking or pulse width compression of Q-switched pulses of diode-pumped solid-state (DPSS) lasers can be achieved. Mode-locked pulses with duration in the picosecond time scale have been routinely generated in various Nd-doped DPSS lasers. Pulse width compression of the Q-switched pulses by a factor of more than three has been obtained. We have experimentally investigated the physical origin of the observed phenomena. It was suggested that they could be caused by the intensity-dependent cavity losses caused by the free-carrier-induced nonlinear refractive index grating in the wafer.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 288, Issue 1, 2 February 2006, Pages 162-165
Journal: Journal of Crystal Growth - Volume 288, Issue 1, 2 February 2006, Pages 162-165
نویسندگان
D.Y. Tang, J. Kong, S.P. Ng,