کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1796448 1023745 2006 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Al incorporation in AlGaN on (112¯2) and (0 0 0 1) surface orientation
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Al incorporation in AlGaN on (112¯2) and (0 0 0 1) surface orientation
چکیده انگلیسی

Epitaxial lateral overgrowth of gallium nitride with (112¯2) facets was realized by metal organic chemical vapor deposition on GaN/sapphire (0 0 0 1) substrates with SiO2 stripe mask. Then AlGaN layers were grown on ELO GaN and on c  -plane GaN templates simultaneously. The variation of the aluminum compositions was studied by photoluminescence spectroscopy, secondary ion mass spectrometry (SIMS) and XRD. Different aluminum content of 0.07 and 0.11 were obtained on (112¯2) facet AlGaN layers and on (0 0 0 1) facet AlGaN layers, respectively. Compare to the c-plane AlGaN layer, it is found that polycrystalline AlGaN is grown on SiO2 layer and has higher Al content. These results indicate that aluminum incorporation depends significantly on the surface orientation.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 292, Issue 1, 15 June 2006, Pages 5–9
نویسندگان
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