کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1796453 | 1023745 | 2006 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Molecular beam epitaxy growth of indium nitride films on c-face zinc oxide substrates
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Heteroepitaxial growth of indium nitride (InN) film crystal on ZnO single crystals was examined. InN films were grown on c(+)- and c(−)-ZnO single crystal substrates by molecular beam epitaxy using an RF plasma cell as a nitrogen source. InN films on c(+)-ZnO had a columnar structure with low crystallinity, while those on c(−)-ZnO were single crystalline films in which the full-width-at-half-maxima of their 0 0 0 2 rocking curves were about 150 arcsec. The polarity dependence of the film crystallinity is discussed in terms of the reactivity at the InN/ZnO interface.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 292, Issue 1, 15 June 2006, Pages 33–39
Journal: Journal of Crystal Growth - Volume 292, Issue 1, 15 June 2006, Pages 33–39
نویسندگان
Takeshi Ohgaki, Naoki Ohashi, Hajime Haneda, Atsuo Yasumori,