کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1796454 1023745 2006 13 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
The evolution of the microstructure and morphology of metal-organic vapor-phase epitaxy-grown InAs films on (1 0 0) GaAs
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
The evolution of the microstructure and morphology of metal-organic vapor-phase epitaxy-grown InAs films on (1 0 0) GaAs
چکیده انگلیسی

The large lattice mismatch (7%) between InAs and GaAs leads to a complex microstructure with many misfit-derived defects. The dependence of the microstructure and morphology of InAs films, deposited on (1 0 0) GaAs substrates via metal-organic vapor-phase epitaxy (MOVPE), on growth parameters and the substrate miscut was studied. The InAs crystal microstructure was evaluated by X-ray diffraction rocking curves, pole figures and by cross-sectional transmission electron microscopy (TEM). At high growth temperatures and high V/III ratios, multiple tilting of the InAs crystal lattice resulted in domains misoriented by 4–7° with respect to each other. Low-angle grain boundaries separating the misoriented grains were observed in cross-sectional TEM micrographs. Low growth temperatures or low V/III ratios resulted in a singly oriented InAs film aligned with the GaAs. Atomic force microscopy (AFM) was employed to determine the surface morphology of InAs thin films and uncoalesced islands. The island areal number-density decreased and island size increased with increasing growth temperature. A smoother InAs surface morphology was observed for the films deposited at a low growth temperature or low V/III ratio. The early coalescence of smaller islands resulted in a single InAs orientation in the coalesced films. The observed effects are discussed in terms of the effect of an In-rich growth environment, resulting from the low growth temperature and low V/III ratio, on the InAs growth chemistry and the strain relaxation phenomena.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 292, Issue 1, 15 June 2006, Pages 40–52
نویسندگان
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