کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1796621 | 1023750 | 2006 | 7 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Vapor pressure scanning of non-stoichiometry in Cd0.9Zn0.1Te1±δ and Cd0.85Zn0.15Te1±δ Vapor pressure scanning of non-stoichiometry in Cd0.9Zn0.1Te1±δ and Cd0.85Zn0.15Te1±δ](/preview/png/1796621.png)
Vapor pressure was measured for the quasi-binary section Cd1−xZnx Te of the phase diagram of the ternary system Cd–Zn–Te with x=0.10x=0.10 and 0.15. From this experiment, P–T–X (pressure–temperature–composition) space arrangement of the solidus was derived, and the vapor pressure scanning method was applied for high-precision determination of non-stoichiometry in Cd0.9Zn0.1Te1±δ and Cd0.85Zn0.15Te1±δ. The solidus volume was shown to be of pronounced asymmetrical shape with retrograde Te solubility. The stoichiometric 50 at% Te plane is contained in the Cd0.9Zn0.1Te1±δ solidus volume, while being completely outside the Cd0.85Zn0.15Te1±δ solidus, on the metal side of it. Phase equilibrium is presented in T–X and P(i)–T projections (i=Cdi=Cd, Zn, Te2) of the phase diagram. These data are crucial for preparation technology of Cd1−xZnxTe1±δ with strictly controlled composition and for high-precision analysis of the matrix elements. From the isoplethal (XS=constXS=const) sections of the solidus, partial sublimation enthalpies of the main vapor species were estimated.
Journal: Journal of Crystal Growth - Volume 289, Issue 2, 1 April 2006, Pages 552–558