کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1796674 | 1023751 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Relationship between appearance crystalline planes and growth temperatures during sublimation growth of AlN crystals
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Self-seeded growth of aluminum nitride single crystals in BN crucible was conducted by sublimation method. It was found that the growth temperature played a critical role in the determination of the crystal morphologies and the appearance crystalline planes. The (0 0 0 1) and pseudo (112¯0) planes were often present at low and high temperature, respectively. The self-seeded crystals possess high structural quality which were assessed by high resolution X-ray diffractometry with a full-width at half-maximum of 35.76 arcsec. Step flow mechanism for the growth of AlN similar to SiC growth was confirmed with the aid of atomic force microscopy.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 293, Issue 1, 15 July 2006, Pages 93–96
Journal: Journal of Crystal Growth - Volume 293, Issue 1, 15 July 2006, Pages 93–96
نویسندگان
Juan Li, Xiaobo Hu, Shouzhen Jiang, Lina Ning, Yingmin Wang, Xiufang Chen, Xiangang Xu, Jiyang Wang, Minhua Jiang,