کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1796709 | 1023752 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The use of diethylselenide as a less-hazardous source in CuInGaSe2 photoabsorbing alloy formation by selenization of metal precursors premixed with Se
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: The use of diethylselenide as a less-hazardous source in CuInGaSe2 photoabsorbing alloy formation by selenization of metal precursors premixed with Se The use of diethylselenide as a less-hazardous source in CuInGaSe2 photoabsorbing alloy formation by selenization of metal precursors premixed with Se](/preview/png/1796709.png)
چکیده انگلیسی
Selenization growth of phase-separation-free polycrystalline CuIn1–xGaxSe2(0⩽x⩽0.29)(0⩽x⩽0.29) films was demonstrated using a less-hazardous organometallic Se source, diethylselenide [(C2H5)2Se: DESe], and stacked structure of Se-premixed Cu–In–Ga metals called ‘precursors’. Distinct from the case of using Se vapor or H2Se gas, single-phase CuInGaSe2 films were obtained without thermal annealing using a combination of DESe and Se-premixed precursors. Photoluminescence spectra of the films at 77 K were dominated by the defect-related donor–acceptor pair and free electron to acceptor recombination emissions, which are particular to the CuInGaSe2 films exhibiting high-conversion efficiency.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 294, Issue 2, 4 September 2006, Pages 214–217
Journal: Journal of Crystal Growth - Volume 294, Issue 2, 4 September 2006, Pages 214–217
نویسندگان
M. Sugiyama, F.B. Dejene, A. Kinoshita, M. Fukaya, Y. Maru, T. Nakagawa, H. Nakanishi, V. Alberts, S.F. Chichibu,