Growth kinetics of Si and SiGe on Si(1 0 0), Si(1 1 0) and Si(1 1 1) surfaces

Using a reduced-pressure chemical vapor deposition cluster tool, we have studied at a growth pressure of 20 Torr, the growth kinetics of Si and SiGe on Si(1 0 0), Si(1 1 0) and Si(1 1 1) substrates. The Si growth rates on Si(1 1 0) and Si(1 1 1) are consistently less than the ones on Si(1 0 0), this both in the high temperature, supply-limited regime and especially in the low-temperature, H-desorption-limited one. We have also studied at 700 °C the growth kinetics of SiGe using a dichlorosilane+germane chemistry. For a given set of precursor mass-flows, the Ge concentration decreases significantly when switching from a (1 0 0) to a (1 1 1) and finally to a (1 1 0) surface. The SiGe growth rate increases almost linearly with the GeH4 mass-flow on (1 0 0) surfaces. By contrast, it bows downwards from linearity on (1 1 0) and (1 1 1) surfaces, leading for high germane mass-flows to lower growth rates than on (1 0 0).