کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1796767 | 1524484 | 2007 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Silicon nanowire growth by electron beam evaporation: Kinetic and energetic contributions to the growth morphology
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Silicon nanowire growth by electron beam evaporation: Kinetic and energetic contributions to the growth morphology Silicon nanowire growth by electron beam evaporation: Kinetic and energetic contributions to the growth morphology](/preview/png/1796767.png)
چکیده انگلیسی
The vertical and epitaxial growth of long (up to a few microns) silicon nanowires on Si(1 1 1) substrates by electron beam evaporation (EBE) (10−6–10−7 mbar) is demonstrated at temperatures between 600 and 700 °C following the vapour–liquid–solid (VLS) growth mechanism from gold nanoparticles. The silicon atoms are provided by evaporating silicon at varying evaporation currents (IE) between 35 and 80 mA, which results in growth rates between 1 and 100 nm/min. The growth peculiarities in the interaction triangle, evaporation current (IE), growth temperature (TS) and gold layer thickness (dAu) will be reported. Kinetic and energetic contributions to the morphology of silicon nanowires will be discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 300, Issue 2, 15 March 2007, Pages 288–293
Journal: Journal of Crystal Growth - Volume 300, Issue 2, 15 March 2007, Pages 288–293
نویسندگان
Vladimir Sivakov, Frank Heyroth, Fritz Falk, Gudrun Andrä, Silke Christiansen,