Keywords: A3 اپیتاکسی; B1. Transition metal dichalcogenides; A3. Epitaxy; B1. Metals; A1. Transmission electron microscopy;
مقالات ISI A3 اپیتاکسی (ترجمه نشده)
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Keywords: A3 اپیتاکسی; A1. Low dimensional structures; A3. Epitaxy; A1. Defects;
Study of low-defect and strain-relaxed GeSn growth via reduced pressure CVD in H2 and N2 carrier gas
Keywords: A3 اپیتاکسی; B1. Germanium tin alloys; B2. Relaxed GeSn; A3. Epitaxy; A3. CVD; A3. N2 carrier gas; A1. Dislocation pinning;
Growth and characterization of epitaxial Ba(Co,Zn)1/3Nb2/3O3 thin films
Keywords: A3 اپیتاکسی; A3. Pulsed Laser Deposition; A3. Epitaxy; B1. Ba(Co,Zn)1/3Nb2/3O3; B2. Microwave dielectrics
Low-temperature growth of epitaxial (1 0 0) silicon based on silane and disilane in a 300 mm UHV/CVD cold-wall reactor
Keywords: A3 اپیتاکسی; A3. Chemical vapor deposition process; A3. Epitaxy; A3. Ultra-high vacuum; B1. Disilane; B2. Semiconducting silicon
The epitaxial role of silica groups in promoting the formation of silica/carbonate biomorphs: A first hypothesis
Keywords: A3 اپیتاکسی; A1. Silica/carbonate biomorphs; A3. Epitaxy; B1. Aragonite; B1. Barium carbonate; B1. Nano-crystals
Hydride vapor phase epitaxy of GaN on the vicinal c-sapphire with a CrN interlayer
Keywords: A3 اپیتاکسی; 81.15.âz; 61.72.uj; 68.55.Ln; 81.10.âh; 61.72.ây; 61.72.Ff; A1. Crystal defects; A1. Dislocations; A1. Thin films; A2. Crystal growth; A3. Epitaxy; B2. III-V and II-VI semiconductors;
Epitaxial growth of GaN on single-crystal Mo substrates using HfN buffer layers
Keywords: A3 اپیتاکسی; 61.05.jh; 68.55.ag; 81.05.Bx; 81.05.Ea; 81.05.JeA1. Structural properties; A3. Epitaxy; B1. Gallium nitride; B1. Hafnium nitride; B1. Molybdenum
Measurement of nitrogen atomic flux for RF-MBE growth of GaN and AlN on Si substrates
Keywords: A3 اپیتاکسی; 81.05.Ea; 81.15.Hi; 52.50.DgA1. Surface; A3. Epitaxy; A3. Molecular beam epitaxy; B2. Semiconduction III–V materials
Structural and optical properties of CdSe quantum dots induced by amorphous Se
Keywords: A3 اپیتاکسی; 68.37.Lp; 68.37.Ps; 68.47.Fg; 68.65.Hb; A1. Nanopatterning; A1. Self-assembly; A1. Surface relaxation and reconstruction; A1. Surface structure, morphology, roughness, and topography; A3. Epitaxy;
Fabrication of 2D ordered arrays of cobalt silicide nanodots on (0Â 0Â 1)Si substrates
Keywords: A3 اپیتاکسی; 81.16.Nd; 81.05.Je; 81.16.Dn; 61.46.Df; 68.55.Ac; A1. Nanosphere lithography; A1. Self-assembly; A3. Epitaxy; B1. Cobalt silicide; B1. Nanodots;
The growth of Pd thin films on a 6H-SiC(0 0 0 1) substrate
Keywords: A3 اپیتاکسی; 68.37.−d; 68.37.Lp; 68.37.PsA1. Microscopy; A1. Twins; A3. Epitaxy; B1. Pd; B2. SiC; B3. Metallic contacts
Silicon nanowire growth by electron beam evaporation: Kinetic and energetic contributions to the growth morphology
Keywords: A3 اپیتاکسی; 68.37.Lp; 68.70.+w; 78.30.−j; 81.15.JjA1. Nanowires; A1. Vapour–liquid–solid growth; A3. Electron beam evaporation; A3. Epitaxy; B2. Silicon
Crystal chemistry of the epitaxy of cristobalite (SiO2) on basal plane sapphire
Keywords: A3 اپیتاکسی; 68.55; 81.15; 81.20.F; A1. Crystal chemistry; A3. Chemical solution deposition; A3. Epitaxy; A3. Thin film; B1. Cristobalite; B1. Sapphire;
Characterisation of epitaxial TiO2 thin films grown on MgO(0Â 0Â 1) using atomic layer deposition
Keywords: A3 اپیتاکسی; 68.37.Lp; 68.55.âa; A1. Transmission electron microscopy; A3. Atomic layer deposition; A3. Epitaxy; B1. MgO substrate; B1. TiO2;
Characterization of low-temperature-grown epitaxial BaPbO3 and Pb(Zr,Ti)O3/BaPbO3 films on SrTiO3 substrates
Keywords: A3 اپیتاکسی; 61.10.Nz; 68.55.Jk; 77.80âe; 81.15.Cd; 81.15.Np; A3. Epitaxy; A3. Physical vapor deposition; B1. Oxides; B1. Perovskites; B2. Ferroelectric materials;
Epitaxy and lattice distortion of V in MgO/V/MgO(0Â 0Â 1) heterostructures
Keywords: A3 اپیتاکسی; 81.15 Cd; 68.55.âa; A1. Atomic force microscopy; A1. Crystal structure; A1. X-ray diffraction; A3. Epitaxy; B1. MgO; B1. Vanadium;
Effect of hydrogenation on the electrical and optical properties of CdZnTe substrates and HgCdTe epitaxial layers
Keywords: A3 اپیتاکسی; 61.72J; 78.55E; 81.65R; A1. Defects; A1. Hydrogenation; A3. Epitaxy; B2. CdZnTe; B2. HgCdTe;
Ex situ scanning force microscopic observation of growth and dissolution phenomena on {0Â 1Â 0} surfaces of potassium hydrogen phthalate crystals (KAP) caused by isomorphic exchange reactions
Keywords: A3 اپیتاکسی; 81.10.Aj; 81.15.Lm; 82.30.Hk; A1. Replacement; A1. Ion exchange; A1. Dissolution; A3. Epitaxy; B1. Phthalates (KAP);
Effect of a Cu-Se secondary phase on the epitaxial growth of CuInSe2 on (1Â 0Â 0) GaAs
Keywords: A3 اپیتاکسی; 81.15.Hi; 81.10.Aj; A3. Epitaxy; B1. Cu-Se; B1. Copper indium diselenide; B1. CIS; A2. S-K growth mode;
Three-dimensional phase field simulation for surface roughening of heteroepitaxial films with elastic anisotropy
Keywords: A3 اپیتاکسی; A1. Anisotropy; A1. Phase field method; A1. Surface morphology; A3. Epitaxy;