کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9830330 | 1524507 | 2005 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Epitaxy and lattice distortion of V in MgO/V/MgO(0Â 0Â 1) heterostructures
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Epitaxy and lattice distortion of V in MgO/V/MgO(0Â 0Â 1) heterostructures Epitaxy and lattice distortion of V in MgO/V/MgO(0Â 0Â 1) heterostructures](/preview/png/9830330.png)
چکیده انگلیسی
The growth temperature depencence of the epitaxy and lattice distortion of 40Â Ã
thick V(0 0 1) films deposited on MgO(0 0 1) by triode sputtering is presented. High-quality epitaxial films are obtained for deposition temperatures between room temperature (RT) and 400 °C. For these temperatures, V grows under compression in the surface plane, matching almost perfectly the in-plane MgO lattice by a 45° rotation, irrespective of the deposition temperature and yielding to the formation of coherent V-MgO interfaces. Correspondingly, the out-of-plane V lattice parameters exhibit an expansion, maximum for room temperature deposition, that gradually decreases as deposition temperature increases. A strong reduction and the extinction of the V(2 0 0) diffraction peak is observed for 500 and 600 °C deposition temperatures, respectively, probably due to the V amorphization for these deposition temperatures.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 273, Issues 3â4, 3 January 2005, Pages 474-480
Journal: Journal of Crystal Growth - Volume 273, Issues 3â4, 3 January 2005, Pages 474-480
نویسندگان
Y. Huttel, E. Navarro, A. Cebollada,