کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1796781 | 1524484 | 2007 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The growth of Pd thin films on a 6H-SiC(0 0 0 1) substrate
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: The growth of Pd thin films on a 6H-SiC(0 0 0 1) substrate The growth of Pd thin films on a 6H-SiC(0 0 0 1) substrate](/preview/png/1796781.png)
چکیده انگلیسی
Pd thin films, grown on Si-rich 6H-SiC(0 0 0 1) substrates, were studied by atomic force microscopy, electron diffraction and high-resolution transmission electron microscopy. It is concluded that the growth is successful only when all the growth process takes place at room temperature. Under these conditions a very good epitaxial growth of Pd is achieved, despite the large misfit (about 8.6%) between Pd and the substrate and the existence of a semi-amorphous layer between the thin film and the substrate. A large number of twins appear in these films.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 300, Issue 2, 15 March 2007, Pages 368–373
Journal: Journal of Crystal Growth - Volume 300, Issue 2, 15 March 2007, Pages 368–373
نویسندگان
I. Tsiaoussis, N. Frangis, C. Manolikas, T.A. Nguyen Tan,