کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9829679 | 1524496 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Crystal chemistry of the epitaxy of cristobalite (SiO2) on basal plane sapphire
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Crystal chemistry of the epitaxy of cristobalite (SiO2) on basal plane sapphire Crystal chemistry of the epitaxy of cristobalite (SiO2) on basal plane sapphire](/preview/png/9829679.png)
چکیده انگلیسی
Epitaxial thin films of α-cristobalite were synthesized on c-plane sapphire using the chemical solution deposition method. The films grow with (1 0 1) orientation at temperatures as low as 800 °C and crystallize only in the presence of Na, either by intentional doping or contamination. X-ray diffraction reveals an in-plane orientation of [1¯01]cris||[101¯0]sapp, with three cristobalite in-plane variants which correspond to the three-fold symmetry of the sapphire. The use of crystal chemistry concepts enabled the accurate prediction of the in-plane orientation between the two structures prior to their experimental determination. To that end, we propose that the interface consists of silicon-centered tetrahedrons that properly coordinate all neighboring cations and provide charge balance between the two structures.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 280, Issues 1â2, 15 June 2005, Pages 168-172
Journal: Journal of Crystal Growth - Volume 280, Issues 1â2, 15 June 2005, Pages 168-172
نویسندگان
Scott A. Jewhurst, David Andeen, F.F. Lange,