کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1796826 1023755 2006 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Well-ordered ZnO nanowire arrays on GaN substrate fabricated via nanosphere lithography
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Well-ordered ZnO nanowire arrays on GaN substrate fabricated via nanosphere lithography
چکیده انگلیسی

Nanopatterned ZnO nanowire arrays are fabricated in large scale on epitaxial GaN substrates through a template-controlled process. This process involves nanosphere self-assembly and mask transfer, deposition of Au nanodots, and vapor–liquid–solid (VLS) growth of ZnO nanowires. Self-assembled polystyrene nanospheres are transferred from hydrophilic glass substrate onto hydrophobic GaN layers using an elegantly simple mask transfer technique. Gold is thermally evaporated through the nanosphere mask to form ordered arrays of Au nanodots. Subsequently, ZnO nanowires are grown via VLS epitaxy mechanism catalyzed by the Au nanodots. The diameters and lengths of the nanowires are strongly correlated with the Au dot sizes and growth time, respectively. Cross-sectional transmission electron microscopy studies confirm the VLS epitaxy mechanism and the single crystallinity of the nanowires.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 287, Issue 1, 18 January 2006, Pages 34–38
نویسندگان
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