Ab initio study of GaAs(100) surface stability over As2, H2 and N2 as a model for vapor-phase epitaxy of GaAs1âxNx
Keywords: A3 epitaxy فاز بخار; A1. Ab initio calculations; A3. Vapor-phase epitaxy; B1. GaAsN; B2. Semiconducting III-V materials; B3. Solar cells;