کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1796884 | 1023756 | 2006 | 8 صفحه PDF | دانلود رایگان |

Sr-hexaferrites with the addition of SiO2 (0–2.0 wt%) have been prepared by the solid-state reaction method. The structural characterization of the samples confirmed the major phase of Sr-hexa-ferrite. The average grain size was found within the range of micron. The coercivity increased up to 1.5 wt% of silica addition and then decreased. Remanence has decreasing trend with the increase of silica percentage. The DC electrical properties were studied as a function of temperature. Activation energy and drift mobility were determined. The room temperature electrical resistivity increased from 5.95×108 to 1.76×109 (Ω-cm), which in turn increased the activation energy with the successive addition of SiO2. The dielectric properties as a function of frequency, under normal conditions, were also measured. From 80 Hz to 1 MHz the dielectric constants and loss factors remained within the range of 3340–12 and 5.75–0.21, respectively.
Journal: Journal of Crystal Growth - Volume 297, Issue 2, 29 December 2006, Pages 403–410