Improved quality of InGaN/GaN multiple quantum wells by a strain relief layer

Different InGaN/GaN multi quantum wells (MQWs) structures were grown by metalorganic chemical vapor deposition (MOCVD). Samples were investigated by photoluminescence (PL), atom force microscopy (AFM) and double crystal X-ray diffractometry (DCXRD) to character their optical, morphological and crystal properties. By inserting the strain relief layer, the PL intensity was increased more than two times. The surface morphology was improved and the density of V-pits was reduced from 16–18×108 to 6–7×108/cm2. Further, the interface abruptness was also improved. We attributed the improvements of the quality of InGaN/GaN MQWs to the relief of strain in the InGaN/GaN MQWs.