کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1797013 | 1023761 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Improved quality of InGaN/GaN multiple quantum wells by a strain relief layer
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Different InGaN/GaN multi quantum wells (MQWs) structures were grown by metalorganic chemical vapor deposition (MOCVD). Samples were investigated by photoluminescence (PL), atom force microscopy (AFM) and double crystal X-ray diffractometry (DCXRD) to character their optical, morphological and crystal properties. By inserting the strain relief layer, the PL intensity was increased more than two times. The surface morphology was improved and the density of V-pits was reduced from 16–18×108 to 6–7×108/cm2. Further, the interface abruptness was also improved. We attributed the improvements of the quality of InGaN/GaN MQWs to the relief of strain in the InGaN/GaN MQWs.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 286, Issue 2, 15 January 2006, Pages 209–212
Journal: Journal of Crystal Growth - Volume 286, Issue 2, 15 January 2006, Pages 209–212
نویسندگان
Niu Nanhui, Wang Huaibing, Liu Jianping, Liu Naixin, Xing Yanhui, Han Jun, Deng Jun, Shen Guangdi,