کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1797127 | 1023769 | 2006 | 4 صفحه PDF | دانلود رایگان |

InGaAs/GaAs/AlGaAs quantum well (QW) structures have been grown at different temperatures by metalorganic chemical vapor deposition (MOCVD) with tertiarybutylarsine (TBAs) as the group V source, and it is found that the QW structures grown at 640 °C shows the strongest photoluminescence (PL) emission. Based on the optimized growth conditions, the InGaAs/GaAs/AlGaAs graded index (GRIN) separate confinement heterostructure (SCH) double quantum well lasers have been grown with TBAs. The 4-μm-wide ridge waveguide lasers show room temperature continuous-wave lasing around 980 nm, with a typical threshold current of 14 mA, indicating that TBAs could be a promising alternative to the highly hazardous gas source AsH3 in growing InGaAs/GaAs/AlGaAs 980 nm QW lasers.
Journal: Journal of Crystal Growth - Volume 289, Issue 1, 15 March 2006, Pages 59–62