کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1797127 1023769 2006 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
MOCVD growth of 980 nm InGaAs/GaAs/AlGaAs graded index separate confinement heterostructure quantum well lasers with tertiarybutylarsine
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
MOCVD growth of 980 nm InGaAs/GaAs/AlGaAs graded index separate confinement heterostructure quantum well lasers with tertiarybutylarsine
چکیده انگلیسی

InGaAs/GaAs/AlGaAs quantum well (QW) structures have been grown at different temperatures by metalorganic chemical vapor deposition (MOCVD) with tertiarybutylarsine (TBAs) as the group V source, and it is found that the QW structures grown at 640 °C shows the strongest photoluminescence (PL) emission. Based on the optimized growth conditions, the InGaAs/GaAs/AlGaAs graded index (GRIN) separate confinement heterostructure (SCH) double quantum well lasers have been grown with TBAs. The 4-μm-wide ridge waveguide lasers show room temperature continuous-wave lasing around 980 nm, with a typical threshold current of 14 mA, indicating that TBAs could be a promising alternative to the highly hazardous gas source AsH3 in growing InGaAs/GaAs/AlGaAs 980 nm QW lasers.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 289, Issue 1, 15 March 2006, Pages 59–62
نویسندگان
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